• Mechanism for SiCl2 formation and desorption and the growth of pits in the etching of Si(100) with chlorine
    G.A. De Wijs, A. De Vita and A. Selloni
    Physical Review Letters, 78 (25) (1997), p4877-4880
    DOI:10.1103/PhysRevLett.78.4877 | unige:2787 | Abstract | Article PDF
A mechanism for SiCl2 formation and desorption in the etching of Si(100)-(2×1) at low chlorine coverages is analyzed using first-principles calculations. We find that the two monochlorinated Si atoms of a surface dimer can rearrange into a metastable SiCl2(a) adsorbed species plus a Cl-free Si atom. Desorption of SiCl2 occurs via a two-step mechanism, in which the adsorbed species is preliminarily stabilized by the diffusion away of the free Si atom. The energy barrier to form SiCl2(a) is lower on a dimer next to a dimer vacancy than in an undamaged region of the surface, consistent with recent STM observation of preferential linear growth of etch pits along dimer rows.
The liquid Mg - Bi system exhibits strong compound formation at the `octet' composition . We present results of first-principles molecular dynamics simulations of this alloy system at different compositions: the pure Mg and Bi liquid components, the stoichiometric liquid, and a Mg-rich composition . For the pure liquids, our results are in excellent agreement with experimental diffraction data. For , a significant modification of the characteristics of the local ordering is found w.r.t. the crystalline -phase: the ordering in the liquid is much more ionic. This structural modification is consistent with the structure of the superionic -phase, that was reported recently by Barnes et al 1994 J. Phys.: Condens. Matter 6 L467. Our simulations cannot reproduce the `reverse' metal - nonmetal transition observed upon melting, the computed conductivity being much larger than found in experiments. Instead, for the Mg-rich alloy, the calculated conductivity approaches closely to the experimental value.
We present density functional calculations of the bonding structures and diffusion barriers for a Cl adatom on Si(001)-(2×1). Besides the stable adsorption site at the dangling bond (DB), a metastable bridge-bonded state breaking a surface dimer bond and ~1.1 eV higher in energy than the DB is found. The calculated properties of this state agree with recent ESDIAD and HREELS observations. This bridge-bonded site is not along the Cl intradimer diffusion pathway of lowest energy. For this path a transition state also having a bridging structure (but not breaking the dimer bond) and rather low in energy ( ~0.6 eV with respect to the DB) is determined. The low intradimer barrier is consistent with the facile switching of Cl recently observed in scanning tunneling microscopy experiments.

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